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ZnO/Mg0.2Zn0.8O coaxial nanorod heterostructures for high-performance electronic nanodevice applications
Cited 20 time in
Web of Science
Cited 28 time in Scopus
- Authors
- Issue Date
- 2009-01
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, Vol.94 No.4, p. 043504
- Abstract
- We report on fabrication and electrical characteristics of field effect transistors (FETs) based on ZnO/Mg0.2Zn0.8O coaxial nanorod heterostructures. As compared to bare ZnO nanorod FETs, coaxial nanorod heterostructure FETs exhibited the enhanced mobility (similar to 110 cm(2)/V s), superior subthreshold swing (similar to 200 mV/decade), and negligibly small hysteresis to demonstrate very stable operation of high-performance nanorod FETs. In situ surface passivation and carrier confinement effects provided by heteroepitaxially grown Mg0.2Zn0.8O shell layer are presumably responsible for the highly enhanced device performance.
- ISSN
- 0003-6951
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Related Researcher
- College of Engineering
- Department of Electrical and Computer Engineering
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