Position-controlled selective growth of ZnO nanorods on Si substrates using facet-controlled GaN micropatterns

Abstract

ZnO nanorod arrays are selectively grown on 31 Substrates using facet-controlled GaN micropatterns with highly anisotropic surface energies. Although we used facet-controlled GaN micropatterns for selective MOPVE growth, other micropatterns can be employed if the difference in surface energies between a top surface and the sidewalls of a micropattern is large enough to affect heteroepitaxial selective growth of the nanorods. This growth may be expanded to create many other position-controlled semiconductor nanorods. [GRAPHICS]