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Reversible Oxidative p-Doping in 2D Tin Halide Perovskite Field-Effect Transistors
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- Authors
- Issue Date
- 2024-03
- Publisher
- American Chemical Society
- Citation
- ACS Energy Letters, Vol.9 No.4, pp.1725-1734
- Abstract
- Tin (Sn) halide perovskites are promising materials for various electronic applications due to their favorable properties. However, facile interaction with atmospheric oxygen (O-2) often hinders the practical use of Sn-based perovskites, which is regarded as a major cause of undesired variations in their electrical and structural properties. Herein, we report the reversible p-doping in phenethylammonium tin iodide ((PEA)(2)SnI4) transistors when they are exposed sequentially to ambient and vacuum conditions. Exposure to ambient conditions induces p-doping effects that lead to a significant shift in the threshold voltage. Interestingly, we have found that the unintentionally p-doped (PEA)(2)SnI4 transistors can be fully restored by simply exposing them to vacuum, indicating a complete dedoping without any structural or operational degradation. Our first-principles calculations further support the observations by revealing that the doping by O-2 molecules occurs via occupying the interstitial sites that form acceptor levels close to the valence band maximum of (PEA)(2)SnI4.
- ISSN
- 2380-8195
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