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Contact-engineered electrical properties of MoS2 field-effect transistors via selectively deposited thiol-molecules
Cited 58 time in
Web of Science
Cited 57 time in Scopus
- Authors
- Issue Date
- 2018-05
- Citation
- Advanced Materials, Vol.30 No.18, p. 1705540
- Abstract
- Although 2D molybdenum disulfide (MoS2) has gained much attention due to its unique electrical and optical properties, the limited electrical contact to 2D semiconductors still impedes the realization of high-performance 2D MoS2-based devices. In this regard, many studies have been conducted to improve the carrier-injection properties by inserting functional paths, such as graphene or hexagonal boron nitride, between the electrodes and 2D semiconductors. The reported strategies, however, require relatively time-consuming and low-yield transfer processes on sub-micrometer MoS2 flakes. Here, a simple contact-engineering method is suggested, introducing chemically adsorbed thiol-molecules as thin tunneling barriers between the metal electrodes and MoS2 channels. The selectively deposited thiol-molecules via the vapor-deposition process provide additional tunneling paths at the contact regions, improving the carrier-injection properties with lower activation energies in MoS2 field-effect transistors. Additionally, by inserting thiol-molecules at the only one contact region, asymmetric carrier-injection is feasible depending on the temperature and gate bias.
- ISSN
- 0935-9648
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