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Analytical threshold voltage model for double-gate MOSFETs with localized charges
Cited 43 time in
Web of Science
Cited 50 time in Scopus
- Authors
- Issue Date
- 2008-08
- Citation
- IEEE Electron Device Letters, Vol.29 No.8, pp.927-930
- Abstract
- An analytical threshold voltage model for double-gate MOSFETs with localized charges is developed. From the 2-D Poisson's equation with parabolic potential approximation, a compact threshold voltage model is derived. The proposed model is then verified with a 2-D device simulator. The model can be used to investigate hot-carrier-induced device degradation for various device dimensions and various charge distributions.
- ISSN
- 0741-3106
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