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Near ultraviolet light emission in hexagonal boron nitride based van der Waals heterostructures

Cited 1 time in Web of Science Cited 1 time in Scopus
Authors

Chae, Sang Hoon; Seo, Dongjea; Cao, Qingrui; Hua, Xiang; Shih, En-Min; Taniguchi, Takashi; Watanabe, Kenji; Kwon, Junyoung; Lee, Gwan-Hyoung; Dean, Cory R.; Schiminovich, David; Herman, Irving P.; Choi, Heon-jin; Kymissis, Ioannis; Kim, Young Duck; Hone, James

Issue Date
2019
Publisher
IEEE
Citation
2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), pp.5-10
Abstract
We demonstrate light emitting devices consisting of graphene layers separated and by thin hexagonal boron nitride (hBN) with additional hBN encapsulation. At high bias through two graphene layer, thin hBN produce near ultraviolet (NUV) light emission at 394 nm. (c) 2019 The Author(s)
ISSN
2160-9020
URI
https://hdl.handle.net/10371/203466
DOI
https://doi.org/10.1364/CLEO_SI.2019.SM1O.2
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2차원 물질, Smiconductor process, semiconductor devices, 반도체 공정, 반도체 소자

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