Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors

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Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors

Cited 64 time in Web of Science Cited 71 time in Scopus

Authors: Lee, Inyeal; Rathi, Servin; Lim, Dongsuk; Li, Lijun; Park, Jinwoo; Lee, Yoontae; Yi, Kyung Soo; Dhakal, Krishna P.; Kim, Jeongyong; Lee, Changgu; Lee, Gwan-Hyoung; Kim, Young Duck; Hone, James; Yun, Sun Jin; Youn, Doo-Hyeb; Kim, Gil-Ho

Abstract: An ambipolar dual-channel field-effect transistor (FET) with a WSe2/MoS2 heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS2 and WSe2, respectively. Moreover, the photo-response is studied at the heterointerface of the WSe2/MoS2 dual-channel FET.