Ga nanoparticle-enhanced photoluminescence of GaAs

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Ga nanoparticle-enhanced photoluminescence of GaAs

Cited 7 time in Web of Science Cited 7 time in Scopus

Authors: Kang, M.; Al-Heji, A. A.; Lee, J. -E.; Saucer, T. W.; Jeon, S.; Wu, J. H.; Zhao, L.; Katzenstein, A. L.; Sofferman, D. L.; Sih, V.; Goldman, R. S.

Abstract: We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission. (C) 2013 AIP Publishing LLC.