Publications
Detailed Information
ZnO nanorods for electronic nanodevice applications
Cited 0 time in
Web of Science
Cited 1 time in Scopus
- Authors
- Issue Date
- 2006
- Publisher
- SPIE
- Citation
- Proceedings of SPIE - The International Society for Optical Engineering, Vol.6122
- Abstract
- We report on fabrications and characteristics of high performance ZnO nanorod nanodevices including Schottky diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs) and logic gate devices. Electrical characteristics of several ZnO nanorod MOSFETs are compared in this proceeding. In particular, after coating polymer thin films on ZnO nanorod surfaces, the nanorod MOSFETs exhibited much improved field effect transistor characteristics including field effect electron mobility as high as 3000 cm2/Vs. In addition, ZnO nanorod Schottky diodes and MESFETs were fabricated using Au/ZnO Schottky contacts without any specific oxide etching process. These devices have been used for realization of ZnO nanorod logic gates.
- ISSN
- 0277-786X
- Files in This Item:
- There are no files associated with this item.
Related Researcher
- College of Engineering
- Department of Electrical and Computer Engineering
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.