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A 0.25um CMOS Quad-Band GSM RF Transceiver using an Efficient LO Frequency Plan

DC Field Value Language
dc.contributor.authorSong, Eun-Seok-
dc.contributor.authorLee, Deok-Hee-
dc.contributor.authorChu, Sang Young-
dc.contributor.authorChae, Soo-Ik-
dc.contributor.authorKoo, Yido-
dc.contributor.authorJung, Yeon-Jae-
dc.date.accessioned2009-12-17T05:38:53Z-
dc.date.available2009-12-17T05:38:53Z-
dc.date.issued2005-
dc.identifier.citationIEEE J. Solid-State Circuits, vol. 40, pp. 1094-1106en
dc.identifier.issn0018-9200-
dc.identifier.urihttps://hdl.handle.net/10371/21260-
dc.description.abstractThis paper describes a single-chip CMOS quad-band
(850/900/1800/1900 MHz) RF transceiver for GSM/GPRS applications.
It is the most important design issue to maximize resource
sharing and reuse in designing the multiband transceivers. In
particular, reducing the number of voltage-controlled oscillators
(VCOs) required for local oscillator (LO) frequency generation is
very important because the VCO and phase-locked loop (PLL) circuits
occupy a relatively large area.We propose a quad-band GSM
transceiver architecture that employs a direct conversion receiver
and an offset PLL transmitter, which requires only one VCO/PLL
to generate LO signals by using an efficient LO frequency plan.
In the receive path, four separate LNAs are used for each band,
and two down-conversion mixers are used, one for the low bands
(850/900 MHz) and the other for the high bands (1800/1900 MHz).
A receiver baseband circuit is shared for all four bands because
all of their channel spaces are the same. In the transmit path,
most of the building blocks of the offset PLL, including a TX VCO
and IF filters, are integrated. The quad-band GSM transceiver
that was implemented in 0.25- m CMOS technology has a size
of 3.3 3.2 mm2, including its pad area. From the experimental
results, we found that the receiver provides a maximum noise
figure of 2.9 dB and a minimum IIP3 of 13.2 dBm for the EGSM
900 band. The transmitter shows an rms phase error of 1.4
and meets the GSM spectral mask specification. The prototype
chip consumes 56 and 58 mA at 2.8 V in the RX and TX modes,
respectively.
en
dc.language.isoen-
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectCMOSen
dc.subjectdc offseten
dc.subjectdirect conversionen
dc.subjectfrequency divideren
dc.subjectGSMen
dc.subjectLO frequencyen
dc.subjectoffset phase-locked loop (PLL)en
dc.subjectquadbanden
dc.subjecttransceiveren
dc.titleA 0.25um CMOS Quad-Band GSM RF Transceiver using an Efficient LO Frequency Planen
dc.typeArticleen
dc.contributor.AlternativeAuthor송은석-
dc.contributor.AlternativeAuthor이덕희-
dc.contributor.AlternativeAuthor주상영-
dc.contributor.AlternativeAuthor채수익-
dc.contributor.AlternativeAuthor구이도-
dc.contributor.AlternativeAuthor정연재-
dc.identifier.doi10.1109/JSSC.2005.845990-
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