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Issue Date	Title / Author(s) / Citation	File
2016-08	A 1T-DRAM cell based on a tunnel field-effect transistor with highly-scalable pillar and surrounding gate structure Kim, Hyungjin; Park, Byung-Gook Journal of the Korean Physical Society, Vol.69 No.3, pp.323-327	DOI
2020-08	Improved Long-Term Stability of Low-Temperature Polysilicon Thin-Film Transistors by Using a Tandem Gate Insulator with an Atomic Layer of Deposited Silicon Dioxide Lee, Sungsoo; Park, Jin-Seong; Hong, Yongtaek Journal of the Korean Physical Society, Vol.77 No.4, pp.277-281	DOI
2022-01	Study on the asymptotic behavior of the interplay of stimulated Brillouin scattering and Brillouin-enhanced four-wave mixing in standard single-mode fibers Park, Kyoungyoon; Harish, Achar, V; Nilsson, Johan; Jeong, Yoonchan Journal of the Korean Physical Society, Vol.80 No.1, pp.37-52	DOI