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Issue Date	Title / Author(s) / Citation	File
2015-11	Fluorinated CYTOP passivation effects on the electrical reliability of multilayer MoS2 field-effect transistors Roh, Jeongkyun; Cho, In-Tak; Shin, Hyeonwoo; Baek, Geun Woo; Hong, Byung Hee; Lee, Jong-Ho; Jin, Sung Hun; Lee, Changhee Nanotechnology, Vol.26 No.45, p. 455201	DOI
2016-08	Elimination of the gate and drain bias stresses in I-V characteristics of WSe2 FETs by using dual channel pulse measurement Park, Jun-Mo; Cho, In-Tak; Kang, Won-Mook; Park, Byung-Gook; Lee, Jong-Ho Applied Physics Letters, Vol.109 No.5, p. 053503	DOI
2020-06	Fluoroelastomer encapsulation for enhanced reliability of solution-processed carbon nanotube thin-film transistors Seo, Jiseok; Ha, Jewook; Lee, Byeongmoon; Kim, Hyeonggyu; Hong, Yongtaek Thin Solid Films, Vol.704, p. 138021	DOI
2022-10	Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge4Se9 Noh, Gichang; Song, Hwayoung; Choi, Heenang; Kim, Mingyu; Jeong, Jae Hwan; Lee, Yongjoon; Choi, Min-Yeong; Oh, Saeyoung; Jo, Min-kyung; Woo, Dong Yeon; Jo, Yooyeon; Park, Eunpyo; Moon, Eoram; Kim, Tae Soo; Chai, Hyun-Jun; Huh, Woong; Lee, Chul-Ho; Kim, Cheol-Joo; Yang, Heejun; Song, Senugwoo; Jeong, Hu Young; Kim, Yong-Sung; Lee, Gwan-Hyoung; Lim, Jongsun; Kim, Chang Gyoun; Chung, Taek-Mo; Kwak, Joon Young; Kang, Kibum Advanced Materials, Vol.34 No.41, p. 2204982	DOI