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Showing results 1 to 7 of 7

Issue Date	Title / Author(s) / Citation	File	Altmetrics
2018-12	Real- time Etch Control to Reduce First Wafer Effect in SF6/O-2/Ar Plasma Ryu, Sangwon; Jang, Yunchang; Kwon, Ji-Won; Park, Damdae; Lee, JongMin; Kim, Gon-Ho 2018 INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING (ISSM), p. 8651157	DOI
2021-06	Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O-2/Ar Capacitively Coupled Plasma Kwon, Ji-Won; Ryu, Sangwon; Park, Jihoon; Lee, Haneul; Jang, Yunchang; Park, Seolhye; Kim, Gon-Ho Materials, Vol.14 No.11, p. 3005	DOI
2021-12	Population kinetics modeling of low-temperature argon plasma Chung, Hyun-Kyung; Song, Mi-Young; Kwon, Ji-Won; Lee, Myeong-Geon; Park, Jihoon; Bae, Namjae; Song, Jeamin; Kim, Gon-Ho; Dipti,; Ralchenko, Yuri Atoms, Vol.9 No.4, p. 100	DOI
2022-02	Phenomenology-based model predictive control of electron density in Ar/SF6 capacitively coupled etch plasma Ryu, Sangwon; Kwon, Ji-Won; Lee, Ingyu; Park, Jihoon; Kim, Gon-Ho Journal of the Korean Physical Society, Vol.80 No.3, pp.233-240	DOI
2022-04	Development of model predictive control of fluorine density in SF6/O2/Ar etch plasma by oxygen flow rate Ryu, Sangwon; Kwon, Ji-Won; Park, Jihoon; Lee, Ingyu; Park, Seolhye; Kim, Gon-Ho Current Applied Physics, Vol.36, pp.183-186	DOI
2022-04	Plasma information-based virtual metrology (PI-VM) and mass production process control Park, Seolhye; Seong, Jaegu; Jang, Yunchang; Roh, Hyun-Joon; Kwon, Ji-Won; Lee, Jinyoung; Ryu, Sangwon; Song, Jaemin; Roh, Ki-Baek; Noh, Yeongil; Park, Yoona; Jang, Yongsuk; Cho, Taeyoung; Yang, Jae-Ho; Kim, Gon-Ho Journal of the Korean Physical Society, Vol.80 No.8, pp.647-669	DOI
2022-08	Investigation of ion collision effect on electrostatic sheath formation in weakly ionized and weakly collisional plasma Lee, Haneul; Kim, Nam-Kyun; Lee, Myeong-Geon; Kwon, Ji-Won; Son, Sung Hyun; Bae, Namjae; Park, Taejun; Park, Seolhye; Kim, Gon-Ho Plasma Sources Science and Technology, Vol.31 No.8, p. 084006	DOI

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