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표면핵생성에 의한 비정질 실리콘박막의 고상결정화 거동 : The Solid-phase crystallization behavior of amorphous silicon films by surface-nucleation

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dc.contributor.advisor김기범-
dc.contributor.author유명관-
dc.date.accessioned2010-01-16T13:54:03Z-
dc.date.available2010-01-16T13:54:03Z-
dc.date.copyright2000.-
dc.date.issued2000-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000069494kor
dc.identifier.urihttps://hdl.handle.net/10371/34575-
dc.description학위논문(박사)--서울대학교 대학원 :금속공학과,2000.ko
dc.format.extentxii, 152 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subject액정디스플레이ko
dc.subjectLiquid-Crystal Display (LCD)ko
dc.subject박막트랜지스터ko
dc.subjectThin-Film Transistor (TFT)ko
dc.subject비정질 실리콘ko
dc.subjectamorphous Si (a-Si)ko
dc.subject고상결정화ko
dc.subjectSolid-Phase Crystallization (SPC)ko
dc.subject다결정 실리콘ko
dc.subjectpolycrystalline Si (poly-Si)ko
dc.title표면핵생성에 의한 비정질 실리콘박막의 고상결정화 거동ko
dc.title.alternativeThe Solid-phase crystallization behavior of amorphous silicon films by surface-nucleationko
dc.typeThesis-
dc.contributor.department금속공학과-
dc.description.degreeDoctorko
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