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Gate-all-around (GAA) 구조 silicon nanowire MOSFET의 제작 및 특성 분석 : Fabrication and analysis of the Gate-All-Around (GAA) structure silicon nanowire MOSFET
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- Authors
- Advisor
- 박병국
- Issue Date
- 2009
- Publisher
- 서울대학교 대학원
- Keywords
- Gate-All-Around (GAA) ; Gate-All-Around (GAA) ; silicon nanowire ; silicon nanowire ; Short-Channel Effect (SCE) ; Short-Channel Effect (SCE) ; scaling-down ; scaling-down ; sidewall spacer ; sidewall spacer ; 공정방법 ; fabrication method
- Description
- 학위논문(석사) --서울대학교 대학원 :전기. 컴퓨터공학부, 2009.2.
- Language
- Korean
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000037029
https://hdl.handle.net/10371/44773
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