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이온 주입을 통한 ALGaNGaN HEMT의 항복전압 향상 효과
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 한민구 | - |
| dc.contributor.author | 조규헌 | - |
| dc.date.accessioned | 2010-01-26T15:37:50Z | - |
| dc.date.available | 2010-01-26T15:37:50Z | - |
| dc.date.copyright | 2008. | - |
| dc.date.issued | 2008 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000042248 | kog |
| dc.identifier.uri | https://hdl.handle.net/10371/45041 | - |
| dc.description | 학위논문(석사) --서울대학교 대학원 :전기. 컴퓨터공학부,2008.8 | ko |
| dc.format.extent | iv, 80 장 | ko |
| dc.language.iso | ko | ko |
| dc.publisher | 서울대학교 대학원 | ko |
| dc.subject | GaN | ko |
| dc.subject | GaN | ko |
| dc.subject | AlGaN | ko |
| dc.subject | AlGaN | ko |
| dc.subject | HEMT | ko |
| dc.subject | proton | ko |
| dc.subject | 양성자 | ko |
| dc.subject | fluoride plasma | ko |
| dc.subject | fluoride 플라즈마 | ko |
| dc.subject | SiO2 | ko |
| dc.subject | SiO2 | ko |
| dc.subject | passivation | ko |
| dc.subject | 패시베이션 | ko |
| dc.title | 이온 주입을 통한 ALGaNGaN HEMT의 항복전압 향상 효과 | ko |
| dc.type | Thesis | - |
| dc.contributor.department | 전기. 컴퓨터공학부 | - |
| dc.description.degree | Master | ko |
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