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불화탄소 플라즈마에 의한 저유전율 박막의 식각 특성 : Etch characteristics of low dielectric constant materials in fluorocarbon plasmas

DC Field Value Language
dc.contributor.advisor문상흡-
dc.contributor.author황성욱-
dc.date.accessioned2010-01-27-
dc.date.available2010-01-27-
dc.date.copyright2003.-
dc.date.issued2003-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000058226kog
dc.identifier.urihttps://hdl.handle.net/10371/45265-
dc.description학위논문(박사)--서울대학교 대학원 :응용화학부,2003.ko
dc.format.extentviii, 104 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subject저유전율 물질ko
dc.subjectSilsesquioxaneko
dc.subject불화탄소 플라즈마ko
dc.subject식각 반응 기구ko
dc.subject각도 의존성ko
dc.subject벽면 거칠기ko
dc.subjectO2 RIEko
dc.subject회분화 공정ko
dc.title불화탄소 플라즈마에 의한 저유전율 박막의 식각 특성ko
dc.title.alternativeEtch characteristics of low dielectric constant materials in fluorocarbon plasmasko
dc.typeThesis-
dc.contributor.department응용화학부-
dc.description.degreeDoctorko
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