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(A)Study on the poly-Si TFT fabricated at 180°C by employing ICP-CVD and ELA : ICP-CVD와 ELA를 이용하여 180도 온도에서 제작된 多結晶 실리콘 薄膜 트랜지스터에 關한 硏究
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 한민구 | - |
dc.contributor.author | 이민철 | - |
dc.date.accessioned | 2010-01-27T23:14:35Z | - |
dc.date.available | 2010-01-27T23:14:35Z | - |
dc.date.copyright | 2004. | - |
dc.date.issued | 2004 | - |
dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000053461 | eng |
dc.identifier.uri | https://hdl.handle.net/10371/45854 | - |
dc.description | Thesis (doctoral)--서울대학교 대학원 :전기·컴퓨터공학부,2004. | en |
dc.format.extent | xiii, 157 p. | en |
dc.language.iso | en | en |
dc.publisher | 서울대학교 대학원 | en |
dc.subject | 다결정 실리콘 박막 트랜지스터(poly-Si TFT) | en |
dc.subject | Poly-si tft | en |
dc.subject | 플라스틱 | en |
dc.subject | Plastic | en |
dc.subject | 유도결합 플라즈마 화학기상증착(ICP-CVD) | en |
dc.subject | Icp-cvd | en |
dc.subject | 엑시머 레이저 | en |
dc.subject | Ela | en |
dc.subject | 아산화질소 (N2O) 플라즈마 | en |
dc.subject | Nitrous oxide plasma | en |
dc.subject | 탈수소 | en |
dc.subject | Dehydrogenation | en |
dc.subject | 재결정화 | en |
dc.subject | Recrystallization | en |
dc.subject | 평탄밴드 전압 | en |
dc.subject | Flat-band voltage | en |
dc.subject | 이동도 | en |
dc.subject | Mobility | en |
dc.subject | 문턱전압이하기울기 | en |
dc.subject | Sub-threshold swing. | en |
dc.title | (A)Study on the poly-Si TFT fabricated at 180°C by employing ICP-CVD and ELA | en |
dc.title.alternative | ICP-CVD와 ELA를 이용하여 180도 온도에서 제작된 多結晶 실리콘 薄膜 트랜지스터에 關한 硏究 | en |
dc.type | Thesis | - |
dc.contributor.department | 전기·컴퓨터공학부 | - |
dc.description.degree | Doctor | en |
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