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Heteroepitaxal fabrication and structural characterization of ultrafine GaN/ZnO coaxial nanorod heterostructures

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Authors
An, Sung Jin; Park, Won Il; Yi, Gyu-Chul; Kim, Yong-Jin; Kang, Hee-Bok; Kim, Miyoung
Issue Date
2004-05-03
Publisher
American Institute of Physics
Citation
Appl. Phys. Lett. 84, 3612 (2004)
Keywords
CORE-SHELL; NITRIDE; GROWTH; GAN
Abstract
We report on heteroepitaxial fabrication and structural characterizations of ultrafine GaN/ZnO coaxial nanorod heterostructures. The coaxial nanorod heterostructures were fabricated by epitaxial growth of a GaN layer on ultrafine ZnO nanorods. Epitaxial growth and precise control of GaN overlayer thickness were obtained by low pressure metalorganic vapor-phase epitaxy. ZnO nanorods grown on Si and sapphire substrates using catalyst-free metalorganic chemical vapor deposition exhibited diameters as small as 7 nm. Furthermore, structural properties of the coaxial nanorod heterostructures were investigated using both synchrotron-radiation x-ray diffraction and high resolution transmission electron microscopy. (C) 2004 American Institute of Physics.
ISSN
0003-6951 (print)1077-3118 (online)
Language
English
URI
http://hdl.handle.net/10371/4883
http://link.aip.org/link/?APPLAB/84/3612/1
DOI
https://doi.org/10.1063/1.1738180
https://doi.org/10.1063/1.1738180
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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