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Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Won Il | - |
dc.contributor.author | Kim, Jin Suk | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.contributor.author | Bae, M. H. | - |
dc.contributor.author | Lee, H.-J. | - |
dc.date.accessioned | 2009-06-23T06:07:11Z | - |
dc.date.available | 2009-06-23T06:07:11Z | - |
dc.date.issued | 2004-11-22 | - |
dc.identifier.citation | Appl. Phys. Lett. 85, 5052 (2004) | en |
dc.identifier.issn | 0003-6951 (print) | - |
dc.identifier.issn | 1077-3118 (online) | - |
dc.identifier.uri | https://hdl.handle.net/10371/4890 | - |
dc.identifier.uri | http://link.aip.org/link/?APPLAB/85/5052/1 | - |
dc.description.abstract | We report on fabrication and electrical characteristics of high-mobility field-effect transistors (FETs) using ZnO nanorods. For FET fabrications, single-crystal ZnO nanorods were prepared using catalyst-free metalorganic vapor phase epitaxy. Although typical ZnO nanorod FETs exhibited good electrical characteristics, with a transconductance of similar to140 nS and a mobility of 75 cm(2)/V s, the device characteristics were significantly improved by coating a polyimide thin layer on the nanorod surface, exhibiting a large turn-ON/OFF ratio of 10(4)-10(5), a high transconductance of 1.9 muS, and high electron mobility above 1000 cm(2)/V s. The role of the polymer coating in the enhancement of the devices is also discussed. (C) 2004 American Institute of Physics. | en |
dc.language.iso | en | en |
dc.publisher | American Institute of Physics | en |
dc.subject | GROWTH | en |
dc.subject | ARRAYS | en |
dc.subject | DC | en |
dc.title | Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 이규철 | - |
dc.contributor.AlternativeAuthor | 박원일 | - |
dc.contributor.AlternativeAuthor | 김진석 | - |
dc.identifier.doi | 10.1063/1.1821648 | - |
dc.identifier.doi | 10.1063/1.1821648 | - |
dc.citation.journaltitle | Applied Physics Letters | - |
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