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RFinFET structure for advanced DRAM cell : 차세대 디램 셀로서의 RFinFET 구조
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 박영준 | - |
| dc.contributor.author | 이명진 | - |
| dc.date.accessioned | 2010-02-02T16:08:39Z | - |
| dc.date.available | 2010-02-02T16:08:39Z | - |
| dc.date.copyright | 2007 | - |
| dc.date.issued | 2007 | - |
| dc.identifier.other | 000000045192 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000045192 | - |
| dc.description | Thesis(doctor`s)--서울大學校 大學院 :電氣·컴퓨터工學部,2007. | - |
| dc.format.extent | xvii, 131 leaves | - |
| dc.language.iso | en | - |
| dc.publisher | 서울大學校 大學院 | - |
| dc.subject | 짧은 채널 효과 | - |
| dc.subject | short channel effect | - |
| dc.subject | 디램 (DRAM) | - |
| dc.subject | DRAM | - |
| dc.subject | 오목한 채널 | - |
| dc.subject | recessed channel | - |
| dc.subject | 핀팻 | - |
| dc.subject | finFET | - |
| dc.subject | 안장형 게이트 | - |
| dc.subject | S-Fin | - |
| dc.subject | 알핀팻 | - |
| dc.subject | RFinFET | - |
| dc.subject | 누설 전류 | - |
| dc.subject | leakage current | - |
| dc.subject | 전류 구동 | - |
| dc.subject | current drivability | - |
| dc.subject | 데이터 보유시간 분포 | - |
| dc.subject | retention time | - |
| dc.subject | 비 휘발성 | - |
| dc.subject | distribution | - |
| dc.subject | 터널링 | - |
| dc.subject | tunneling | - |
| dc.title | RFinFET structure for advanced DRAM cell | - |
| dc.title.alternative | 차세대 디램 셀로서의 RFinFET 구조 | - |
| dc.type | Thesis | - |
| dc.contributor.department | 電氣·컴퓨터工學部 | - |
| dc.description.degree | Thesis(doctor`s)-- | - |
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