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Design and fabrication of the gallium nitride power HEMT and schottky barrier diode : Gallium nitride 電力 헴트 및 쇼키 다이오드의 設計 및 製作
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 한민구 | - |
| dc.contributor.author | 이승철 | - |
| dc.date.accessioned | 2010-02-02T16:11:07Z | - |
| dc.date.available | 2010-02-02T16:11:07Z | - |
| dc.date.copyright | 2006 | - |
| dc.date.issued | 2006 | - |
| dc.identifier.other | 000000046608 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000046608 | - |
| dc.description | Thesis(doctoral)--서울대학교 대학원 :전기·컴퓨터공학부,2006. | - |
| dc.format.extent | x, 180 leaves | - |
| dc.language.iso | en | - |
| dc.publisher | 서울대학교 대학원 | - |
| dc.subject | high electron mobility transistor (HEMT) | - |
| dc.subject | high electron mobility transistor (HEMT) | - |
| dc.subject | 쇼키 다이오드 | - |
| dc.subject | Schottky barreri diode (SBD) | - |
| dc.subject | 엑시머 레어저 조사 | - |
| dc.subject | excimer laser irradiation | - |
| dc.subject | 도핑 방법 | - |
| dc.subject | doping method | - |
| dc.subject | floating 쇼키 접합 | - |
| dc.subject | floating metal ring | - |
| dc.subject | 산화 공정 | - |
| dc.subject | edge termination | - |
| dc.subject | floating gate | - |
| dc.subject | oxidation | - |
| dc.title | Design and fabrication of the gallium nitride power HEMT and schottky barrier diode | - |
| dc.title.alternative | Gallium nitride 電力 헴트 및 쇼키 다이오드의 設計 및 製作 | - |
| dc.type | Thesis | - |
| dc.contributor.department | 전기·컴퓨터공학부 | - |
| dc.description.degree | Thesis(doctoral)-- | - |
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