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Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Won Il | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.date.accessioned | 2009-06-23T08:42:49Z | - |
dc.date.available | 2009-06-23T08:42:49Z | - |
dc.date.issued | 2004-01-05 | - |
dc.identifier.citation | Adv. Mater. 2004, 16, 87 | en |
dc.identifier.issn | 0935-9648 (print) | - |
dc.identifier.issn | 1521-4095 (online) | - |
dc.identifier.uri | https://hdl.handle.net/10371/4900 | - |
dc.description.abstract | Electrolurninescent (EL) devices (see Figure) have been fabricated using n-ZnO nanorod arrays grown on p-GaN epilayers. Simple heteroepitaxial growth yields vertically aligned ZnO nanorods with an abrupt interface on GaN. The p-n heterojunction EL device shows a high current density and strong electroluminescence even at a reverse-bias voltage of 3 V. | en |
dc.language.iso | en | en |
dc.publisher | John Wiley & Sons | en |
dc.subject | OPTOELECTRONIC DEVICES | en |
dc.subject | ROOM-TEMPERATURE | en |
dc.subject | BAND | en |
dc.subject | PHOTOLUMINESCENCE | en |
dc.subject | EMISSIONS | en |
dc.title | Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 이규철 | - |
dc.contributor.AlternativeAuthor | 박원일 | - |
dc.identifier.doi | 10.1002/adma.200305729 | - |
dc.identifier.doi | 10.1002/adma.200305729 | - |
dc.citation.journaltitle | Advanced Materials | - |
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