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AIGaNGaN HEMTs Schottky Gate Edge의 전계 집중 완화를 위한 새로운 구조 설계 및 제작 : AlGaNGaN HEMTs Employing New Edge Termination Structures

DC Field Value Language
dc.contributor.advisor한민구-
dc.contributor.author임지용-
dc.date.accessioned2010-02-04T23:58:28Z-
dc.date.available2010-02-04T23:58:28Z-
dc.date.copyright2007.-
dc.date.issued2007-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000043953kog
dc.identifier.urihttps://hdl.handle.net/10371/50102-
dc.description학위논문(석사) --서울대학교 대학원 :전기. 컴퓨터공학부,2007.ko
dc.format.extentiv, 66 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subjectGaNko
dc.subjectHEMTko
dc.subjectpassivationko
dc.subjectfield plateko
dc.subjectfloating gateko
dc.titleAIGaNGaN HEMTs Schottky Gate Edge의 전계 집중 완화를 위한 새로운 구조 설계 및 제작ko
dc.title.alternativeAlGaNGaN HEMTs Employing New Edge Termination Structuresko
dc.typeThesis-
dc.contributor.department전기. 컴퓨터공학부-
dc.description.degreeMasterko
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