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단일 온도영역의 HB(horizontal bridgman)법에 의한 GaAs 단결정 성장에 관한 연구 : A Study on the single temperature zone horizontal bridgman method for GaAs single crystal growing

DC Field Value Language
dc.contributor.advisor주승기-
dc.contributor.author오명환-
dc.date.accessioned2010-02-05T06:45:29Z-
dc.date.available2010-02-05T06:45:29Z-
dc.date.copyright1995.-
dc.date.issued1995-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000084664kog
dc.identifier.urihttps://hdl.handle.net/10371/50894-
dc.description학위논문(박사)--서울대학교 대학원 :금속공학과,1995.ko
dc.format.extentx, 138 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subjectGaAs 단결정 성장ko
dc.subjectAs증기압ko
dc.subjectGa-As 계의 상평형ko
dc.subject열역학ko
dc.subject결정질ko
dc.title단일 온도영역의 HB(horizontal bridgman)법에 의한 GaAs 단결정 성장에 관한 연구ko
dc.title.alternativeA Study on the single temperature zone horizontal bridgman method for GaAs single crystal growingko
dc.typeThesis-
dc.contributor.department금속공학과-
dc.description.degreeDoctorko
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