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Low-Temperature Epitaxial Growth of Cubic Silicon Carbide on Si(100) for Submicron-pattern Fabrications

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Authors
An, Sung-Jae; Yi, Gyu-Chul
Issue Date
2001-03-15
Publisher
Japan Society of Applied Physics
Citation
Jpn. J. Appl. Phys. 40 (2001) 1379
Keywords
cubic silicon carbide (SiC); supersonic molecular jet epitaxy; selective-area growth; submicron patterns; Si(100) substrates
Abstract
SiC films were selectively grown on patterned SiO2/Si(100) substrates using supersonic molecular jet epitaxy. For film growth, we employed methylsilane seeded in a carrier gas (He or H-2) as a reactant gas. Due to the high translational kinetic energy of methylsilane molecules in the supersonic jet, the growth temperature was as low as 670 degreesC. The reduction of the growth temperature is explained in terms of a decrease in the activation energy and enhancement of the reaction efficiency from methylsilane to the SiC film during film growth. More importantly, a high growth rate of SiC at low temperature yielded submicron patterns of SiC without degradation of the SiO2 mask.
ISSN
0021-4922 (print)1347-4065 (online)
Language
English
URI
http://hdl.handle.net/10371/5352
DOI
https://doi.org/10.1143/JJAP.40.1379
https://doi.org/10.1143/JJAP.40.1379
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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