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Photoluminescent Properties of Se-doped GaN
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yi, Gyu-Chul | - |
| dc.contributor.author | Park, Won Il | - |
| dc.date.accessioned | 2009-07-12T23:57:22Z | - |
| dc.date.available | 2009-07-12T23:57:22Z | - |
| dc.date.issued | 2001-07-15 | - |
| dc.identifier.citation | Jpn. J. Appl. Phys. 40 (2001) 4470 | en |
| dc.identifier.issn | 0021-4922 (print) | - |
| dc.identifier.issn | 1347-4065 (online) | - |
| dc.identifier.uri | http://jjap.ipap.jp/link?JJAP/40/4470/ | - |
| dc.identifier.uri | https://hdl.handle.net/10371/5354 | - |
| dc.description.abstract | The nature of Se donors in GaN was investigated using temperature dependent photoluminescence spectroscopy. Near-bandedge emission of the doped films was investigated at temperatures between 15-300 K. Based on the temperature dependence of the near-bandedge emission, the Se donor level in GaN was estimated to be 38 +/- 4 meV below the conduction band minimum. | en |
| dc.description.sponsorship | This research was sponsored by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology as one of the 21 century Frontier Programs, the POSTECH BSRI Special Fund-2001, and the Brain Korea 21 project. | en |
| dc.language.iso | en | - |
| dc.publisher | Japan Society of Applied Physics | en |
| dc.subject | Se-doped GaN | en |
| dc.subject | photoluminescence spectroscopy | en |
| dc.subject | metal-organic vapor phase epitaxy | en |
| dc.title | Photoluminescent Properties of Se-doped GaN | en |
| dc.type | Article | en |
| dc.contributor.AlternativeAuthor | 이규철 | - |
| dc.contributor.AlternativeAuthor | 박원일 | - |
| dc.identifier.doi | 10.1143/JJAP.40.4470 | - |
| dc.identifier.doi | 10.1143/JJAP.40.4470 | - |
| dc.citation.journaltitle | Japanese Journal of Applied Physics = JJAP | - |
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