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Local structure around Ga in ultrafine GaN/ZnO coaxial nanorod heterostructures

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Authors
Han, S.-W.; Yoo, H.-J.; An, Sung Jin; Yoo, Jinkyoung; Yi, Gyu-Chul
Issue Date
2006-03-13
Publisher
American Institute of Physics
Citation
Appl. Phys. Lett. 88, 111910 (2006)
Abstract
The structure of tubular GaN coaxially grown on ZnO nanorods with thickness of 6-12 nm was investigated using x-ray absorption fine structure (XAFS) at the Ga K edge. The XAFS measurements revealed that the GaN had a distorted-wurtzite structure, and that there were more distortions in the bond length of Ga-Ga pairs than in Ga-N pairs. However, no extra disorders were observed in any of the pairs. These results strongly suggest that Ga atoms first bonded to the ZnO template. Unlike other techniques, the XAFS determines structure around a selected species atom in nano-heterostructures.
ISSN
0003-6951 (print)1077-3118 (online)
Language
English
URI
http://link.aip.org/link/?APPLAB/88/111910/1
http://hdl.handle.net/10371/5369
DOI
https://doi.org/10.1063/1.2185627
https://doi.org/10.1063/1.2185627
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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