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ZnSe-Si bi-coaxial nanowire heterostructures

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Authors
Wang, Chunrui; Wang, Juan; Li, Quan; Yi, Gyu-Chul
Issue Date
2005-08-29
Publisher
John Wiley & Sons
Citation
Adv. Funct. Mater. 2005, 15, 1471
Keywords
Heterostructures; Nanowires, inorganic; Silicon; Zinc selenide
Abstract
We report on the fabrication, structural characterization, and luminescence properties od ZnSe/Si bi-coaxial nanowire hetero-structures. Uniform ZnSe/Si bi-coaxial nanowire heterostructures are grown on silicon substrate by simple one-step thermal evaporeation od ZnSe powder in the presence of hydrogen. Both ZnSe and silicon are single-crystalline in the bi-coaxial nanowire heterostructures, and there is a sharp interface along the nanowire axial direction. Furthermore, secondary nanostructures of either ZnSe nanobrushes od a SiOx sheath are also grown on the primary bi-coaxial nanowires are formed via a co-growth mechanism, that is, ZnSe terminates specific surfaces of silicon and leads to anisotropic, one-dimension silicon growth, which simultaneously serves as preferential nucleation sites for ZnSe, resulting in the bi-coaxial nanowire heterostructures. In addition, the optical properties od ZnSe/Si nanowires are investigated using low-temperature photoluminescence spectroscopy.
ISSN
1616-301X (print)1616-3028 (online)
Language
English
URI
http://hdl.handle.net/10371/5443
DOI
https://doi.org/10.1002/adfm.200400564
https://doi.org/10.1002/adfm.200400564
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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