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Heteroepitaxial Growth of High-Quality GaN Thin Films on Si Substrates Coated with Self-Assembled Sub-micrometer-sized

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Authors
An, Sung Jin; Hong, Young Joon; Yi, Gyu-Chul; Kim, Yong-Jin; Lee, Dong Kun
Issue Date
2006-10-10
Publisher
John Wiley & Sons
Citation
Adv. Mater. 2006, 18, 2833
Keywords
Epitaxial growthLithographySelf assemblySilicaThin films
Abstract
Monodisperse sub-micrometer-sized silica balls are employed as an intermediate layer for the heteroepitaxial growth of GaN thin films on Si(111) substrates (see figure). The structural and optical characteristics of the films are shown to be improved compared to conventional techniques, as the maskless overgrowth technique employed simplifies the growth process. This method could be exploited to grow other heteroepitaxial films on substrates with large lattice constants and thermal expansion coefficient mismatches.
ISSN
0935-9648
Language
English
URI
http://hdl.handle.net/10371/5461
DOI
https://doi.org/10.1002/adma.200601628

https://doi.org/10.1002/adma.200601628
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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