S-Space College of Natural Sciences (자연과학대학) Dept. of Physics and Astronomy (물리·천문학부) Physics (물리학전공) Journal Papers (저널논문_물리학전공)
Heteroepitaxial Growth of High-Quality GaN Thin Films on Si Substrates Coated with Self-Assembled Sub-micrometer-sized
- An, Sung Jin; Hong, Young Joon; Yi, Gyu-Chul; Kim, Yong-Jin; Lee, Dong Kun
- Issue Date
- John Wiley & Sons
- Adv. Mater. 2006, 18, 2833
- Monodisperse sub-micrometer-sized silica balls are employed as an intermediate layer for the heteroepitaxial growth of GaN thin films on Si(111) substrates (see figure). The structural and optical characteristics of the films are shown to be improved compared to conventional techniques, as the maskless overgrowth technique employed simplifies the growth process. This method could be exploited to grow other heteroepitaxial films on substrates with large lattice constants and thermal expansion coefficient mismatches.
- Files in This Item: There are no files associated with this item.