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Low-temperature (similar to 270 degrees C) growth of vertically aligned ZnO nanorods using photoinduced metal organic vapour phase epitaxy
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yatsui, T | - |
dc.contributor.author | Lim, J | - |
dc.contributor.author | Nakamata, T | - |
dc.contributor.author | Kitamura, K | - |
dc.contributor.author | Ohtsu, M | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.date.accessioned | 2009-07-14T06:44:26Z | - |
dc.date.available | 2009-07-14T06:44:26Z | - |
dc.date.issued | 2007-02-14 | - |
dc.identifier.citation | Nanotechnology 18 065606 | en |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://hdl.handle.net/10371/5467 | - |
dc.description.abstract | We successfully produced a drastic decrease in the required growth temperature of single-crystalline ZnO nanorods, and enabled successful growth of vertically aligned ZnO nanorods on a Si(100) substrate using photoinduced metal organic vapour phase epitaxy (MOVPE). We introduced 325 nm light during the MOVPE growth, and achieved vertical growth of single-crystalline ZnO nanorods with a hexagonal crystal structure on Si(100) at a growth temperature of 270 degrees C. The successful low-temperature growth of ZnO nanorods on the Si(100) substrate described here is a promising step toward designing nanoscale photonic and electronic devices required by future systems. | en |
dc.description.sponsorship | The work at POSTECH was supported by the National Creative Research Initiative Project, Korea and AOARD 05-84 (Quotation No. FA5209-05-T0369), United States. | en |
dc.language.iso | en | en |
dc.publisher | Institute of Physics | en |
dc.title | Low-temperature (similar to 270 degrees C) growth of vertically aligned ZnO nanorods using photoinduced metal organic vapour phase epitaxy | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 이규철 | - |
dc.identifier.doi | 10.1088/0957-4484/18/6/065606 | - |
dc.citation.journaltitle | Nanotechnology | - |
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