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Epitaxial growth of Ge on Si(001)with atomic hydrogen surfactant : 원자화된 수소를 활성제로 사용한 에피 성장

DC Field Value Language
dc.contributor.advisor국양-
dc.contributor.author강세종-
dc.date.accessioned2010-02-22-
dc.date.available2010-02-22-
dc.date.copyright1998.-
dc.date.issued1998-
dc.identifier.urihttp://library.snu.ac.kr/search/DetailView.ax?sid=1&cid=0000757046eng
dc.identifier.urihttps://hdl.handle.net/10371/55894-
dc.descriptionThesis (doctoral)--서울대학교 대학원 :물리학과,1998.en
dc.format.extentiii, 166 p.en
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subject주사 턴넬링 현미경en
dc.subjectscanning tunneling microscopyen
dc.subject중간 에너지 이온 산란en
dc.subjectmedium energy ion scatteringen
dc.subject수소en
dc.subjecthydrogenen
dc.subject게르마늄en
dc.subjectGeen
dc.subject실리콘(100)en
dc.subjectSi(100)en
dc.titleEpitaxial growth of Ge on Si(001)with atomic hydrogen surfactanten
dc.title.alternative원자화된 수소를 활성제로 사용한 에피 성장-
dc.typeThesis-
dc.contributor.department물리학과-
dc.description.degreeDoctoren
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