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Studies on In0.2Ga0.8As strained multiple quantum well laser diode grown on GaAs patterned substrate : GaAs 패턴 난 기판 위에 성장시킨 In0.2Ga0.8As 변형된 다중 양자우물 레이저 다이오드에 관한 연구

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dc.contributor.advisor최병두-
dc.contributor.author조승룡-
dc.date.accessioned2010-02-22-
dc.date.available2010-02-22-
dc.date.copyright1997.-
dc.date.issued1997-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000077771eng
dc.identifier.urihttps://hdl.handle.net/10371/56118-
dc.descriptionThesis (master`s)--서울대학교 대학원 :물리학과,1997.en
dc.format.extent37 p.en
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.titleStudies on In0.2Ga0.8As strained multiple quantum well laser diode grown on GaAs patterned substrateen
dc.title.alternativeGaAs 패턴 난 기판 위에 성장시킨 In0.2Ga0.8As 변형된 다중 양자우물 레이저 다이오드에 관한 연구-
dc.typeThesis-
dc.contributor.department물리학과-
dc.description.degreeMasteren
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