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Composition dependence of activation energy in solid phase epitaxial growth of Si1-xGex alloys

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Authors
Suh, K. Y.; Lee, Hong H.
Issue Date
1996-12-15
Publisher
American Institute of Physics
Citation
J. Appl. Phys. 80, 6716 (1996)
Keywords
SELF-DIFFUSIONGERMANIUMSILICONLAYERSCRYSTALLIZATIONREGROWTHKINETICSGEIMPLANTATIONPRESSURE
Abstract
A theoretical model called the ''multibody model'' is developed for the composition dependence of the activation energy. The model that is based on the diffusion required of the recrystallization for the solid phase epitaxy does not involve any adjustable parameters and is shown to represent experimental data satisfactorily. For the Si1-xGex alloys that are of diamond structure, the most logical choice is the ''five-body model'' involving five atoms. The model is equally applicable to any other binary alloy.
ISSN
0021-8979
Language
English
URI
http://hdl.handle.net/10371/6245
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Mechanical Aerospace Engineering (기계항공공학부)Journal Papers (저널논문_기계항공공학부)
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