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Phase boundary between ripple and hut in the initial roughening stage in heteroepitaxy

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Authors
Suh, K. Y.; Lee, Hong H.
Issue Date
1998-05-01
Publisher
American Institute of Physics
Citation
J. Chem. Phys. 83, 4991 (1998)
Keywords
SURFACEGROWTHEVOLUTIONMORPHOLOGYSI(001)EPITAXYSTRAINFILMS
Abstract
A regularly undulating surface topography has been observed during growth of heteroepitaxial layers such as Si1-xGex/Si-2 and InxGa1-xAs/GaAs5. We present a modified evolution mechanism of this ripple structure, which consists of initial roughening and evolving stages. A theoretical relationship is derived through energy minimization, which indicates that the ratio of the amplitude to the square of the period of the ripple structure is constant in the evolving stage. Also derived is a criterion for determining the phase boundary between the ripple and hut phases in the Stranski-Krastanov growth.
ISSN
0021-8979
Language
English
URI
http://hdl.handle.net/10371/6258
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Mechanical Aerospace Engineering (기계항공공학부)Journal Papers (저널논문_기계항공공학부)
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