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Ge composition in Si1-xGex films grown from SiH2Cl2/GeH4 precursors

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Authors
Suh, K. Y.; Lee, Hong H.
Issue Date
2000-10-01
Publisher
American Institute of Physics
Citation
J. Appl. Phys. 88, 4044 (2000)
Keywords
CHEMICAL-VAPOR-DEPOSITIONSILICON-GERMANIUMEPITAXIAL-GROWTHATMOSPHERIC-PRESSUREGAS-PHASEKINETICSSI
Abstract
A simple model for the Ge composition in Si1-xGex films grown from SiH2Cl2/GeH4 precursors is developed on the basis of adsorption and desorption kinetics for the intermediate temperature range (600 degrees C < T < 900 degrees C). For this system, the solid phase composition of Ge, x, is related to the gas phase composition ratio of the two source gases, G, by x(2)/(1-x) = constantxG, which contrasts with the conventional relationship, x/(1-x) = constantxG, that is known for SiH4/GeH4 chemical vapor deposition. The proportionality constant depends not only on temperature but also on pressure. The model compares well with the experimental data in the literature.
ISSN
0021-8979
Language
English
URI
http://hdl.handle.net/10371/6265
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Mechanical Aerospace Engineering (기계항공공학부)Journal Papers (저널논문_기계항공공학부)
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