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열 필라멘트에 의한 결정성 실리콘 나이트라이드 저온 증착 : Deposition of Crystalline Silicon Nitride at Low Temperature by Hot-Wire Chemical Vapor Deposition
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 황농문 | - |
| dc.contributor.author | 윤웅규 | - |
| dc.date.accessioned | 2010-05-10T03:43:47Z | - |
| dc.date.available | 2010-05-10T03:43:47Z | - |
| dc.date.copyright | 2010 | - |
| dc.date.issued | 2010 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000033285 | kog |
| dc.identifier.uri | https://hdl.handle.net/10371/64809 | - |
| dc.description | 학위논문(석사) --서울대학교 대학원 :재료공학부,2010.2. | ko |
| dc.format.extent | 52장 | ko |
| dc.language.iso | ko | ko |
| dc.publisher | 서울대학교 대학원 | ko |
| dc.subject | 열 필라멘트 화학 기상 증착 | ko |
| dc.subject | HWCVD (Hot Wire Chemical Vapor Deposition) | ko |
| dc.subject | 결정질 α-실리콘 나이트라이드 | ko |
| dc.subject | crystalline a-Si3N4 nanoparticles | ko |
| dc.subject | 나노입자 | ko |
| dc.subject | precipitation temperature | ko |
| dc.subject | 석출온도 | ko |
| dc.subject | substrate temperature | ko |
| dc.subject | 압력 | ko |
| dc.subject | reactor pressure | ko |
| dc.subject | 기판온도 | ko |
| dc.title | 열 필라멘트에 의한 결정성 실리콘 나이트라이드 저온 증착 | ko |
| dc.title.alternative | Deposition of Crystalline Silicon Nitride at Low Temperature by Hot-Wire Chemical Vapor Deposition | ko |
| dc.type | Thesis | - |
| dc.contributor.department | 재료공학부 | - |
| dc.description.degree | Master | ko |
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