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Investigation of transport mechanism of amorphous GST : 비정질 GST의 전기적 특성 연구

DC Field Value Language
dc.contributor.advisor차국린-
dc.contributor.author주찬종-
dc.date.accessioned2010-05-10T10:17:30Z-
dc.date.available2010-05-10T10:17:30Z-
dc.date.copyright2010-
dc.date.issued2010-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000033146eng
dc.identifier.urihttps://hdl.handle.net/10371/65257-
dc.descriptionThesis(masters) --서울대학교 대학원 :물리·천문학부(물리학전공),2010.2.en
dc.format.extentv, 27 leavesen
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subject비정질 GSTen
dc.subjectAmorphous GSTen
dc.subject직류 마그네트론 떼려내기en
dc.subjectDC magnetron sputtering methodsen
dc.subject터널 접합en
dc.subjectR-T measurementen
dc.subjectR-T 측정en
dc.subjectdirect tunnelling modelen
dc.subject직접 터널링 모델en
dc.subjectresonant tunnellingen
dc.subject공명 터널링 모델en
dc.subjectinelastic hopping modelen
dc.subject비탄성 건너뜀 모델en
dc.titleInvestigation of transport mechanism of amorphous GSTen
dc.title.alternative비정질 GST의 전기적 특성 연구en
dc.typeThesis-
dc.contributor.department물리·천문학부(물리학전공)-
dc.description.degreeMasteren
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