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Seedless Fill - up of the Damascene Structure Only by Copper Electroless Plating

Cited 23 time in Web of Science Cited 25 time in Scopus
Authors
Kim, Jae Jeong; Cha, Seung Hwan; Lee, Young-Soo
Issue Date
2003-08-01
Publisher
Japan Society of Applied Physics
Citation
Japanese Journal of Applied Physics 42(2003) L953-L955
Keywords
copperelectrolessdamascenecopper oxidetemperature
Abstract
We attempted to fill up seedlessly the damascene pattern in ULSI interconnection only by Cu electroless plating. Cu2O
content, which was generally detected in Cu electroless plating, was removed through controlling the plating temperature.
Optimum control in electrolyte concentration and plating temperature leaded to good characteristics of electrolessly plated Cu
with 2.1 m cm resistivity, 8.9 nm rms roughness at 160 nm thickness, good adhesion and 10 nm/min deposition rate. The
optimum condition was successfully applied to a damascene pattern with aspect ratio of 3 and via size of 0.13 mm without void
and seam.
ISSN
0021-4922
Language
English
URI
http://hdl.handle.net/10371/65990
DOI
https://doi.org/10.1143/JJAP.42.L953
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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