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Local Corrosion of the Oxide Passivation Layer during Cu Chemical Mechanical Polishing

DC Field Value Language
dc.contributor.authorKang, Min Cheol-
dc.contributor.authorKim, Yung Jun-
dc.contributor.authorKoo, Hyo-Chol-
dc.contributor.authorCho, Sung Ki-
dc.contributor.authorKim, Jae Jeong-
dc.date.accessioned2010-07-05T06:21:30Z-
dc.date.available2010-07-05T06:21:30Z-
dc.date.issued2009-10-01-
dc.identifier.citationElectrochemical and Solid state Letters, 12(12), H433-H436en
dc.identifier.issn1099-0062-
dc.identifier.urihttps://hdl.handle.net/10371/68295-
dc.description.abstractIn this article, we analyze the effect of complexing agents in Cu chemical mechanical polishing slurry on the formation of oxide
and the evolution of stress. The passivation property and surface morphology of the oxide on the surface showed significant
differences depending on the kind of complexing agent. Oxalic acid showed fast oxide formation with poor passivation performance,
and this caused large tensile stress evolution over 250 MPa in the Cu film. The synergetic effect of stress evolution and
temperature increase due to the friction during the polishing caused severe pitting of the Cu surface after polishing in oxalic-acidbased
slurry.
en
dc.description.sponsorshipThis work was supported by the Korea Science and Engineering
Foundation through the Research Center for Energy Conversion and
Storage, the Fundamental Research and Development Program for
Core Technology of Materials funded by the Korean Ministry of
Commerce, Industry, and Energy, and by the Institute of Chemical
Processes at Seoul National University.
en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.titleLocal Corrosion of the Oxide Passivation Layer during Cu Chemical Mechanical Polishingen
dc.typeArticleen
dc.contributor.AlternativeAuthor강민철-
dc.contributor.AlternativeAuthor김영준-
dc.contributor.AlternativeAuthor구효철-
dc.contributor.AlternativeAuthor조성기-
dc.contributor.AlternativeAuthor김재정-
dc.identifier.doi10.1149/1.3236391-
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