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Characterization and Cu Electroless Plating of Laser-drilled Through-Wafer via-holes in GaN/Al2O3

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Authors
Ahn, Jaehui; Kim, Hong-Yeol; Koo, Hyo-chol; Kim, Jae Jeong; Kim, Jihyun
Issue Date
2009-05-29
Publisher
Elsevier
Citation
Thin Solid Films 517 (2009) 3841 - 3843
Keywords
GaNLaser drillingCu plating
Abstract
GaN on Al2O3 was drilled with a high power Nd:YAG laser. Micro-Raman spectroscopy showed that the
induced damage was nominal at about 15 μm from the edge of the drilled through-wafer via-holes. Cu
plating was accomplished using an electroless plating technique. FIB was employed to expose the interface
between electrolessly plated Cu and GaN on the sidewall of the drilled holes, followed by SEM/EDX to
confirm that the sidewall of the drilled holes was successfully covered with Cu. Cu electroless plating after
laser drilling has the potential to simplify device layout and improve device integration.
ISSN
0040-6090
Language
English
URI
http://hdl.handle.net/10371/68302
DOI
https://doi.org/10.1016/j.tsf.2009.01.160
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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