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광수신기 설계방법을 응용한 신경신호 기록용 능동형 반도체 미세전극을 위한 CMOS 전치 증폭기의 잡음특성 설계 : Application of Photoreceiver Design Method for the Design of Noise Performance of CMOS Preamplifier for the Active Semiconductor Neural Probe
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김경환 | - |
| dc.contributor.author | 김성준 | - |
| dc.date.accessioned | 2009-08-24 | - |
| dc.date.available | 2009-08-24 | - |
| dc.date.issued | 1999-05 | - |
| dc.identifier.citation | 제6회 광전자공학학술회의, FB1, p135, 광주과학기술원, 1999년 5월 | en |
| dc.identifier.uri | https://hdl.handle.net/10371/7530 | - |
| dc.description.abstract | We present a systematic design method for the optimization of SNR of semiconductor neural probe, based on the spectra characteristics of the electrode, circuit noise and extracellular action potential The method is based on the photoreceiver design methodology. Analytical expression is derived to calculate total output noise power. Output SNR of 2-stage CMOS preamplifier is tailored to meet the given specification while the layout area is minimized. | en |
| dc.language.iso | ko | en |
| dc.title | 광수신기 설계방법을 응용한 신경신호 기록용 능동형 반도체 미세전극을 위한 CMOS 전치 증폭기의 잡음특성 설계 | en |
| dc.title.alternative | Application of Photoreceiver Design Method for the Design of Noise Performance of CMOS Preamplifier for the Active Semiconductor Neural Probe | en |
| dc.type | Conference Paper | en |
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