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Integration of waveguide-type wavelength demultiplexingphotodetectors by the selective intermixing of an InGaAs-InGaAsPquantum-well structure

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Authors
Yeo, Deok Ho; Yoon, Kyung Hun; Kim, Hang Ro; Kim, Sung June
Issue Date
2001-06
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
J. Quantum Electron., vol. 37, pp. 824-829, June 2001
Keywords
Dielectric cap annealingdual wavelength photodetectorInGaAs–InGaAsP multiquantum wellsintegrated opticsquantum-well intermixingwaveguide photodetector
Abstract
Abstract—Using the selective intermixing of an InGaAs–In-
GaAsP multiquantum-well (MQW) structure, a wavelength
demultiplexing photodetector which can demultiplex two widely
separated wavelengths was fabricated. An InGaAs–InGaAsP
MQW with a u-InP cladding layer and a u-InGaAs cap layer,
grown by metal organic chemical vapor deposition was used. Selective
area intermixing of the InGaAs–InGaAsP MQW structure
was done by a rapid thermal annealing after the deposition and
patterning of the SiO2 dielectric layer on the InGaAs cap layer.
The integrated structure consists of shorter and longer wavelength
sections, separated by an absorber section. Shorter wavelength
and absorber sections were intermixed with the SiO2 dielectric
layer. At a wavelength of 1477 nm, the output photocurrent ratio
was enhanced as the length of the absorber region increased and
a ratio of over 30 dB was observed, while at a wavelength of 1561
nm, an output photocurrent ratio of 18.9 dB was observed.
ISSN
0018-9197
Language
English
URI
http://hdl.handle.net/10371/8864
DOI
https://doi.org/10.1109/3.922781
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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