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Integration of waveguide-type wavelength demultiplexingphotodetectors by the selective intermixing of an InGaAs-InGaAsPquantum-well structure
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- Authors
- Issue Date
- 2001-06
- Citation
- J. Quantum Electron., vol. 37, pp. 824-829, June 2001
- Keywords
- Dielectric cap annealing ; dual wavelength photodetector ; InGaAs–InGaAsP multiquantum wells ; integrated optics ; quantum-well intermixing ; waveguide photodetector
- Abstract
- Abstract—Using the selective intermixing of an InGaAs–In-
GaAsP multiquantum-well (MQW) structure, a wavelength
demultiplexing photodetector which can demultiplex two widely
separated wavelengths was fabricated. An InGaAs–InGaAsP
MQW with a u-InP cladding layer and a u-InGaAs cap layer,
grown by metal organic chemical vapor deposition was used. Selective
area intermixing of the InGaAs–InGaAsP MQW structure
was done by a rapid thermal annealing after the deposition and
patterning of the SiO2 dielectric layer on the InGaAs cap layer.
The integrated structure consists of shorter and longer wavelength
sections, separated by an absorber section. Shorter wavelength
and absorber sections were intermixed with the SiO2 dielectric
layer. At a wavelength of 1477 nm, the output photocurrent ratio
was enhanced as the length of the absorber region increased and
a ratio of over 30 dB was observed, while at a wavelength of 1561
nm, an output photocurrent ratio of 18.9 dB was observed.
- ISSN
- 0018-9197
- Language
- English
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