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Area selectivity of InGaAsP-InP multiquantum-well intermixing by impurity-free vacancy diffusion

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Authors
Si, Sang Kee; Yeo, Deok Ho; Yoon, Kyung Hun; Kim, Sung June
Issue Date
1998-07
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
IEEE J. Sel. Top. Quant., vol. 4, pp. 619-623, 1998
Keywords
Area selectivitybandgap tuningimpurity-free vacancy diffusion (IFVD)InGaAsP–InP multiquantum-well (MQW) structureslateral diffusion coefficientquantum-well intermixing
Abstract
Area selectivity of bandgap tuning in the InGaAsPInP
multiquantum-well structure has been investigated using low
temperature photoluminescence (PL). The bandgap blue-shift in
the intermixed region was as much as 170 meV for a rapid thermal
annealer anneal of 30 s at 850 C, and was controllable using
annealing temperature and time. From samples with SiO2 stripe
patterns, clearly separated PL peaks were observed centered at
0.95 and 1.08 eV, each representing signals originating from the
dielectric capped and exposed areas, respectively. In samples with
stripes intervals less than 6 m, PL signals did not separate, but
formed one broad spectrum due to lateral diffusion. The lateral
diffusion was found less than 3.0 m.
ISSN
1077-260X
Language
English
URI
http://hdl.handle.net/10371/8869
DOI
https://doi.org/10.1109/2944.720471
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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