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High-speed signal switching with a monolithic integrated p-i-n/amp/switch on indium phosphide
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seabury, C. W. | - |
dc.contributor.author | Bylsma, R. B. | - |
dc.contributor.author | Vella-Coleiro, G. P. | - |
dc.contributor.author | Kim, Sung June | - |
dc.contributor.author | Davisson, P. S. | - |
dc.contributor.author | Yee, C. M. L. | - |
dc.contributor.author | Eng, James | - |
dc.contributor.author | Deblis, D. | - |
dc.contributor.author | Jeong, Jichai | - |
dc.contributor.author | Jhee, Y. K. | - |
dc.date.accessioned | 2009-09-08 | - |
dc.date.available | 2009-09-08 | - |
dc.date.issued | 1991-02 | - |
dc.identifier.citation | IEEE Photon. Technol. Lett., vol. 3, pp. 164-166, Feb. 1991 | en |
dc.identifier.issn | 1041-1135 | - |
dc.identifier.uri | https://hdl.handle.net/10371/8874 | - |
dc.description.abstract | Operation of an optoelectronic integrated circuit which
includes two p-i-ns, preamplifiers, 2 x 2 crosspoint .switch, and output buffers has been demonstrated. These circuits have been fabricated in semi-insulating 1nP:Fe substrates by vapor phase epitaxy and ion implantation using a planar horizontally integrated technology. Signals modulated at 150 MHz are shown to be switched at 15 MHz, with the circuits capable of detecting and passing data modulated at - 1 GHz. | en |
dc.language.iso | en | - |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en |
dc.title | High-speed signal switching with a monolithic integrated p-i-n/amp/switch on indium phosphide | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 김성준 | - |
dc.contributor.AlternativeAuthor | 정지채 | - |
dc.identifier.doi | 10.1109/68.76877 | - |
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