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광소자 제작을 위해 spin-on 방식으로 Zn 도핑된 InP의 광학적 특성 분석
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- Authors
- Issue Date
- 2000-05
- Citation
- 제8회 광전자 및 광통신 학술회의, pp. 229-230, 무주리조트, 2000년 5월 16-18일
- Abstract
- In this study Zn doping was carried out by spin-on method for the fabrication of InP based optical devices. The properties of Zn-doped InP were characterized using low temperature photoluminescence, differential Hall measurement, and secondary ion mass spectrometry. Net hole concentration of 5-8X10(18)cm3 is close to Zn concentration. Band-to-acceptor transition peak is dominant in low temperature photoluminescence.
- Language
- Korean
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