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Performance enhancement of planar heterojunction perovskite solar cells by n-doping of the electron transporting layer

Cited 56 time in Web of Science Cited 55 time in Scopus
Authors
Kim, Shin Sung; Bae, Seunghwan; Jo, Won Ho
Issue Date
2015
Publisher
Royal Society of Chemistry
Citation
Chemical Communications, 51, 17413-17416
Abstract
Herein we report a simple n-doping method to enhance the performance of perovskite solar cells with a planar heterojunction structure. Devices with an n-doped PCBM electron transporting layer exhibit a power conversion efficiency of 13.8% with a remarkably enhanced short-circuit current of 22.0 mA cm2 as compared to the devices with an un-doped PCBM layer.
Language
English
URI
http://hdl.handle.net/10371/95412
DOI
https://doi.org/10.1039/c5cc05253j
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Journal Papers (저널논문_재료공학부)
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