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Performance enhancement of planar heterojunction perovskite solar cells by n-doping of the electron transporting layer
Cited 75 time in
Web of Science
Cited 76 time in Scopus
- Authors
- Issue Date
- 2015-12
- Publisher
- Royal Society of Chemistry
- Citation
- Chemical Communications, Vol.51 No.98, pp.17413-17416
- Abstract
- Herein we report a simple n-doping method to enhance the performance of perovskite solar cells with a planar heterojunction structure. Devices with an n-doped PCBM electron transporting layer exhibit a power conversion efficiency of 13.8% with a remarkably enhanced short-circuit current of 22.0 mA cm(-2) as compared to the devices with an un-doped PCBM layer.
- ISSN
- 1359-7345
- Language
- English
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