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Showing results 1 to 4 of 4

Issue Date	Title / Author(s) / Citation	File
2018-12	Real- time Etch Control to Reduce First Wafer Effect in SF6/O-2/Ar Plasma Ryu, Sangwon; Jang, Yunchang; Kwon, Ji-Won; Park, Damdae; Lee, JongMin; Kim, Gon-Ho 2018 INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING (ISSM), p. 8651157	DOI
2021-06	Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O-2/Ar Capacitively Coupled Plasma Kwon, Ji-Won; Ryu, Sangwon; Park, Jihoon; Lee, Haneul; Jang, Yunchang; Park, Seolhye; Kim, Gon-Ho Materials, Vol.14 No.11, p. 3005	DOI
2022-04	Plasma information-based virtual metrology (PI-VM) and mass production process control Park, Seolhye; Seong, Jaegu; Jang, Yunchang; Roh, Hyun-Joon; Kwon, Ji-Won; Lee, Jinyoung; Ryu, Sangwon; Song, Jaemin; Roh, Ki-Baek; Noh, Yeongil; Park, Yoona; Jang, Yongsuk; Cho, Taeyoung; Yang, Jae-Ho; Kim, Gon-Ho Journal of the Korean Physical Society, Vol.80 No.8, pp.647-669	DOI
2023-01	Investigation of ion-induced etch damages on trench surface of Ge2Sb2Te5 in high density Ar/SF6 plasma Song, Jaemin; Lee, Myeonggeon; Ryu, Sangwon; Jang, Yunchang; Park, Seolhye; Kim, Gon-Ho Current Applied Physics, Vol.45, pp.105-113	DOI