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A Highly Linear X-Band GaN HEMT Transformer-Based Doherty Power Amplifier
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- Authors
- Advisor
- 권영우
- Major
- 공과대학 전기·컴퓨터공학부
- Issue Date
- 2015-08
- Publisher
- 서울대학교 대학원
- Keywords
- Doherty PA
- Description
- 학위논문 (석사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2015. 8. 권영우.
- Abstract
- This thesis presents an X-band Transformer-based Doherty Power Amplifier(PA) with a phase linearizer. Doherty PA used Cree inc. 6 W GaN HEMT bare die and implemented on 7-layer PCB. The phase linearizer compensates a phase distortion of Doherty PA.
X-band Conventional Doherty PA is designed at 10 GHz for performance comparison with the X-band Transformer-based Doherty PA. The Conventional Doherty PA used Cree inc. 6 W GaN HEMT bare die and has been implemented using RT/Duroid 5880 10 mil thick substrate. The continuous wave (CW) measurement results show the peak output power of 40.3 dBm with a 40 V drain supply voltage at 10 GHz, the peak drain efficiency (DE) of 51% and the peak power added efficiency (PAE) of 40.3%. And the DE and PAE at 6 dB output power back-off are 41% and 33% respectively.
X-band Transformer-based Doherty PA has been measured. The CW measurement results show the peak output power of 39.6 dBm with a 40 V supply at 9.56 GHz. The peak DE is 50.4% while the peak PAE is 38.5%. The DE and the PAE of the amplifier is still as high as 40% and 32.5% respectively at 6 dB output power back-off.
- Language
- English
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